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  Datasheet File OCR Text:
 NTE18 (NPN) & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver
Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +135C Note 1. PW = 20ms, Duty Cycle = 1/2 Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency NTE18 NTE19 Output Capacitance NTE18 NTE19 Cob VCB = 10V, IE = 0, f = 1MHz Symbol Test Conditions Min 80 80 5 - - 120 - - - - - Typ - - - - - - 200 120 100 10 14 Max - - - 0.5 0.5 270 400 - - - 20 mV MHz MHz pF pF Unit V V V A A V(BR)CEO IC = 2mA V(BR)CBO IC = 50A V(BR)EBO IE = 50A ICBO IEBO hFE VCE(sat) fT VCB = 50V VEB = 4V VCE = 3V, IC = 100mA IC = 500mA, IB = 50mA VCE = 10V, IC = 50mA
.102 (2.6)
.280 (7.11) .185 (4.7)
E
C
B
.100 (2.54) .051 (1.29)
.138 (3.5) .022 (0.55)


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